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| 2012. 3. 29 1/2 semiconductor technical data kds193 silicon epitaxial planar diode revision no : 2 ultra high speed switching application. features h small package : sot-23. h low forward voltag : v f =0.9v(typ.). h fast reverse recovery time : t rr =1.6ns(typ.). h small total capacitance : c t =0.9pf(typ.). maximum rating (ta=25 ? ) dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ electrical characteristics (ta=25 ? ) f f( fm characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d 150 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ?
2012. 3. 29 2/2 kds193 revision no : 2 1 0.1 reverse voltage v (v) r r t c - v reverse current i ( a) r 10 0 reverse voltage v (v) r total capacitance c (pf) 0 i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c t a=2 5 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c t 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t - i f forward current i (ma) 0.1 0.5 rr reverse recovery time t (ns) rr f 0.3 1 3 10 30 100 1 3 5 10 30 50 100 ta=25 c fig. 1 0.3 fig. 1. reverse recovery time(t ) test circuit rr 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r =50 ? ) in waveform 0.1 i r 0 i r f i =10ma rr t pulse generator (r =50 ? ) out 50ns -6v 0 |
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